| Patent | Date |
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Semiconductor device with two-dimensional electron gas
Grant 9,966,441 - Kikuchi , et al. May 8, 2 | 2018-05-08 |
Semiconductor Device
App 20170084704 - KIKUCHI; Takuo ; et al. | 2017-03-23 |
Semiconductor device having switching element and method for fabricating semiconductor device having switching element
Grant 8,058,693 - Endo , et al. November 15, 2 | 2011-11-15 |
Semiconductor Device Having Switching Element And Method For Fabricating Semiconductor Device Having Switching Element
App 20100187598 - ENDO; Koichi ; et al. | 2010-07-29 |
Semiconductor Substrate And Method Of Manufacture Thereof
App 20080242067 - OGINO; Masanobu ; et al. | 2008-10-02 |
Semiconductor substrate and method of manufacture thereof
App 20040124445 - Ogino, Masanobu ; et al. | 2004-07-01 |
Semiconductor device with breakdown voltage improved by hetero region
Grant 6,476,429 - Baba November 5, 2 | 2002-11-05 |
Semiconductor device and manufacturing method thereof
App 20020008258 - Baba, Yoshiro | 2002-01-24 |
Semiconductor device having directionally balanced gates and manufacturing method
Grant 6,337,498 - Hasegawa , et al. January 8, 2 | 2002-01-08 |
Semiconductor gate trench with covered open ends
Grant 6,239,464 - Tsuchitani , et al. May 29, 2 | 2001-05-29 |
Semiconductor device
Grant 6,060,747 - Okumura , et al. May 9, 2 | 2000-05-09 |
Semiconductor device and method of manufacturing the same with stable control of lifetime carriers
Grant 6,031,276 - Osawa , et al. February 29, 2 | 2000-02-29 |
Method of manufacturing semiconductor bonded substrate
Grant 6,010,950 - Okumura , et al. January 4, 2 | 2000-01-04 |
Trench-type schottky-barrier diode
Grant 5,917,228 - Matsuda , et al. June 29, 1 | 1999-06-29 |
Method for manufacturing a vertical transistor having a trench gate
Grant 5,770,514 - Matsuda , et al. June 23, 1 | 1998-06-23 |
Method of manufacturing MOS type semiconductor device of vertical structure
Grant 5,733,810 - Baba , et al. March 31, 1 | 1998-03-31 |
Semiconductor device having a buried insulated gate
Grant 5,610,422 - Yanagiya , et al. March 11, 1 | 1997-03-11 |
Vertical power MOSFET and process of fabricating the same
Grant 5,578,508 - Baba , et al. November 26, 1 | 1996-11-26 |
Semiconductor device and method of increasing device breakdown voltage of semiconductor device
Grant 5,554,872 - Baba , et al. September 10, 1 | 1996-09-10 |
Vertical MOSFET having trench covered with multilayer gate film
Grant 5,321,289 - Baba , et al. June 14, 1 | 1994-06-14 |
Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths
Grant 5,250,446 - Osawa , et al. October 5, 1 | 1993-10-05 |
Method of production of vertical MOS transistor
Grant 5,242,845 - Baba , et al. September 7, 1 | 1993-09-07 |
Vertical MOS transistor and its production method
Grant 5,126,807 - Baba , et al. June 30, 1 | 1992-06-30 |
Dielectrically isolated structure for use in soi-type semiconductor device
Grant 5,126,817 - Baba , et al. June 30, 1 | 1992-06-30 |
Planar semiconductor device having high breakdown voltage
Grant 5,086,332 - Nakagawa , et al. February 4, 1 | 1992-02-04 |
Semiconductor device having a semiconductive protection layer
Grant 5,029,324 - Osawa , et al. July 2, 1 | 1991-07-02 |
Bonded substrate of semiconductor elements having a high withstand voltage
Grant 4,984,052 - Koshino , et al. January 8, 1 | 1991-01-08 |
Evaluation method for semiconductor device
Grant 4,968,932 - Baba , et al. November 6, 1 | 1990-11-06 |
Composite semiconductor device
Grant 4,710,794 - Koshino , et al. December 1, 1 | 1987-12-01 |
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