| Patent | Date |
|---|
Dual-purpose portable card, a communication system, a communication method, a terminal apparatus, and a computer-readable record medium recording a program
Grant 6,886,753 - Azuma May 3, 2 | 2005-05-03 |
Metal oxide integrated circuit on silicon germanium substrate
Grant 6,864,146 - Paz de Araujo , et al. March 8, 2 | 2005-03-08 |
Dual purpose portable card, a communication system, a communication method, a terminal apparatus, and a computer-readable record medium recording a program
Grant 6,840,443 - Azuma January 11, 2 | 2005-01-11 |
Dual-purpose portable card, a communication system, a communication method, a terminal apparatus, and a computer-readable record medium recording a program
App 20040169080 - Azuma, Masamichi | 2004-09-02 |
Dual-purpose portable card, a communication system, a communication method, a terminal apparatus, and a computer-readable record medium recording a program
App 20040169081 - Azuma, Masamichi | 2004-09-02 |
Ferroelectric film and semiconductor device
Grant 6,734,456 - Tanaka , et al. May 11, 2 | 2004-05-11 |
Metal oxide integrated circuit on silicon germanium substrate
App 20040051129 - Paz de Araujo, Carlos A. ; et al. | 2004-03-18 |
Portable body used in two way, communication system, communication method, terminal, computer-readable recorded medium on which program is recorded
Grant 6,704,608 - Azuma March 9, 2 | 2004-03-09 |
Metal insulator structure with polarization-compatible buffer layer
Grant 6,664,115 - Azuma , et al. December 16, 2 | 2003-12-16 |
Metal Insulator Semiconductor Structure With Polarization-compatible Buffer Layer
App 20030207470 - Azuma, Masamichi ; et al. | 2003-11-06 |
Metal oxide integrated circuit on silicon germanium substrate
Grant 6,639,262 - Paz de Araujo , et al. October 28, 2 | 2003-10-28 |
Ferroelectric film and semiconductor device
App 20030151078 - Tanaka, Keisuke ; et al. | 2003-08-14 |
Method of making ferroelectric FET with polycrystalline crystallographically oriented ferroelectric material
Grant 6,537,830 - Arita , et al. March 25, 2 | 2003-03-25 |
Method of making a semiconductor device with capacitor element
App 20020155663 - Nagano, Yoshihisa ; et al. | 2002-10-24 |
Integrated circuit capacitors with barrier layer and process for making the same
Grant 6,447,838 - Azuma , et al. September 10, 2 | 2002-09-10 |
Thin film capacitors on silicon germanium substrate and process for making the same
App 20020109178 - McMillan, Larry D. ; et al. | 2002-08-15 |
Thin film capacitors on silicon germanium substrate
Grant 6,404,003 - McMillan , et al. June 11, 2 | 2002-06-11 |
Semiconductor Device With Capacitor Elements Substantially Free Of Titanium
App 20020000589 - NAGANO, YOSHIHISA ; et al. | 2002-01-03 |
Metal oxide integrated circuit on silicon germanium substrate
App 20010054728 - Paz de Araujo, Carlos A. ; et al. | 2001-12-27 |
Thin film capacitors on gallium arsenide substrate
Grant 6,327,135 - Azuma , et al. December 4, 2 | 2001-12-04 |
Metal insulator semiconductor structure with polarization-compatible buffer layer
Grant 6,310,373 - Azuma , et al. October 30, 2 | 2001-10-30 |
Capacitor for integrated circuit and its fabrication method
App 20010019874 - Uemoto, Yasuhiro ; et al. | 2001-09-06 |
Capacitor for integrated circuit and its fabrication method
Grant 6,214,660 - Uemoto , et al. April 10, 2 | 2001-04-10 |
Fabrication method of capacitor for integrated circuit
Grant 6,204,111 - Uemoto , et al. March 20, 2 | 2001-03-20 |
UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue
Grant 6,133,050 - Azuma , et al. October 17, 2 | 2000-10-17 |
Misted precursor deposition apparatus and method with improved mist and mist flow
Grant 5,962,085 - Hayashi , et al. October 5, 1 | 1999-10-05 |
Capacitor for integrated circuit and its fabrication method
Grant 5,929,475 - Uemoto , et al. July 27, 1 | 1999-07-27 |
Electrical component having low-leakage current and low polarization fatigue made by UV radiation process
Grant 5,909,042 - Azuma , et al. June 1, 1 | 1999-06-01 |
Encapsulated capacitor structure having a dielectric interlayer
Grant 5,822,175 - Azuma October 13, 1 | 1998-10-13 |
Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same
Grant 5,814,849 - Azuma , et al. September 29, 1 | 1998-09-29 |
Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same
Grant 5,803,961 - Azuma , et al. September 8, 1 | 1998-09-08 |
Thin films of ABO.sub.3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same
Grant 5,723,361 - Azuma , et al. March 3, 1 | 1998-03-03 |
Bottom electrode structure for dielectric capacitors
Grant 5,708,302 - Azuma , et al. January 13, 1 | 1998-01-13 |
Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same
Grant 5,690,727 - Azuma , et al. November 25, 1 | 1997-11-25 |
Thin film capacitors on gallium arsenide substrate and process for making the same
Grant 5,620,739 - Azuma , et al. April 15, 1 | 1997-04-15 |
Integrated circuit capacitors and process for making the same
Grant 5,614,018 - Azuma , et al. March 25, 1 | 1997-03-25 |
Process for making metal oxides
Grant 5,612,082 - Azuma , et al. March 18, 1 | 1997-03-18 |
Specially doped precursor solutions for use in methods of producing doped ABO.sub.3 -type average perovskite thin-film capacitors
Grant 5,516,363 - Azuma , et al. May 14, 1 | 1996-05-14 |
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