AXT, Inc.

Patent Applications and Registrations

Patent applications and USPTO patent grants for AXT, Inc..The latest application filed is for "method and system for vertical gradient freeze 8 inch gallium arsenide substrates".

Company Profile

2.10.15

AXT, Inc. - Fremont CA US
AXT, Inc - Fremont CA
AXT. Inc. -

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Trademarks

Patent Activity

Patent	Date
Method And System For Vertical Gradient Freeze 8 Inch Gallium Arsenide Substrates App 20220298673 - Liu; Weiguo ; et al.	2022-09-22
Low Etch Pit Density, Low Slip Line Density, And Low Strain Indium Phosphide App 20210269939 - Young; Morris ; et al.	2021-09-02
Low Etch Pit Density 6 Inch Semi-insulating Gallium Arsenide Wafers App 20200190696 - Shetty; Rajaram ; et al.	2020-06-18
Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant App 20200190697 - Shetty; Rajaram ; et al.	2020-06-18
Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same Grant 8,647,433 - Liu , et al. February 11, 2	2014-02-11
Systems, methods and substrates of monocrystalline germanium crystal growth Grant 8,506,706 - Liu August 13, 2	2013-08-13
Low etch pit density (EPD) semi-insulating III-V wafers Grant 8,361,225 - Liu , et al. January 29, 2	2013-01-29
Systems, methods and solutions for chemical polishing of GaAs wafers Grant 8,318,042 - Kaixie , et al. November 27, 2	2012-11-27
Crystal Growth Apparatus And Method App 20120282133 - Liu; Weiguo ; et al.	2012-11-08
Crystal growth apparatus and method Grant 8,231,727 - Liu , et al. July 31, 2	2012-07-31
Low Etch Pit Density (EPD) Semi-Insulating III-V Wafers App 20110293890 - Liu; Weiguo ; et al.	2011-12-01
Germanium Ingots/wafers Having Low Micro-pit Density (mpd) As Well As Systems And Methods For Manufacturing Same App 20110143091 - Liu; Weiguo ; et al.	2011-06-16
Systems, methods and solutions for chemical polishing of GaAs wafers App 20100176336 - Kaixie; Tan ; et al.	2010-07-15
Systems, Methods and Substrates of Monocrystalline Germanium Crystal Growth App 20100116196 - Liu; Weiguo	2010-05-13
Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers App 20100001288 - Liu; Weiguo ; et al.	2010-01-07
Low etch pit density (EPD) semi-insulating GaAs wafers Grant 7,566,641 - Liu , et al. July 28, 2	2009-07-28
Laser Adjustable Depth Mark System And Method App 20090179015 - Zhao; Xiaodong ; et al.	2009-07-16
Apparatus and method for reducing impurities in a semiconductor material App 20060183329 - Leung; Charles ; et al.	2006-08-17
Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control Grant 6,896,729 - Liu , et al. May 24, 2	2005-05-24
High power, high luminous flux light emitting diode and method of making same Grant 6,650,018 - Zhao , et al. November 18, 2	2003-11-18
Transparent substrate light emitting diode Grant 6,643,304 - Chen , et al. November 4, 2	2003-11-04
Apparatus for growing monocrystalline group II-VI and III-V compounds App 20030172870 - Liu, Xiao Gordon ; et al.	2003-09-18
Window for light-emitting diode Grant 6,580,096 - Chen , et al. June 17, 2	2003-06-17
Window for GaN LED App 20030010994 - Chen, John ; et al.	2003-01-16
InGaN/A1GaN/GaN Multilayer Buffer for Growth of GaN on Sapphire App 20020175337 - Chen, Changhua ; et al.	2002-11-28

Company Registrations

NCAGE Code	0LYF9	AXT, INC.
CAGE Code	0LYF9	AXT, INC.
S.A.M. Registration	0LYF9 [196741979]	AXT, INC.
SEC	0001051627	AXT INC of DELAWARE

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