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Patent applications and USPTO patent grants for Aujol; Eric.The latest application filed is for "method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate".
Patent | Date |
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Method for manufacturing a single crystal of nitride by epitaxial growth on a substrate preventing growth on the edges of the substrate Grant 8,557,042 - Aujol , et al. October 15, 2 | 2013-10-15 |
Method For Manufacturing A Single Crystal Of Nitride By Epitaxial Growth On A Substrate Preventing Growth On The Edges Of The Substrate App 20100074826 - Aujol; Eric ;   et al. | 2010-03-25 |
Process for producing an epitaxial layer of gallium nitride by the HVPE method Grant 6,632,725 - Trassoudaine , et al. October 14, 2 | 2003-10-14 |
Process for producing an epitaxial layer of gallium nitride by the HVPE method App 20030013222 - Trassoudaine, Agnes ;   et al. | 2003-01-16 |
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