ASAYAMA; Shinobu

Patent Applications and Registrations

Patent applications and USPTO patent grants for ASAYAMA; Shinobu.The latest application filed is for "image sensor".

Company Profile

0.17.17

ASAYAMA; Shinobu - Kanagawa JP
Asayama; Shinobu - Kawasaki JP
ASAYAMA; Shinobu - Kawasaki-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Image Sensor App 20220139992 - ITO; Tomomi ; et al.	2022-05-05
Semiconductor device Grant 9,190,414 - Asayama November 17, 2	2015-11-17
Semiconductor Device App 20150236025 - ASAYAMA; Shinobu	2015-08-20
Semiconductor device Grant 9,053,816 - Asayama June 9, 2	2015-06-09
Semiconductor Device App 20150070977 - ASAYAMA; Shinobu	2015-03-12
Semiconductor device Grant 8,908,420 - Asayama December 9, 2	2014-12-09
Semiconductor memory device and test method therefor Grant 8,737,118 - Asayama May 27, 2	2014-05-27
Semiconductor Device App 20130329487 - ASAYAMA; Shinobu	2013-12-12
Semiconductor memory device including SRAM cell Grant 8,391,093 - Asayama March 5, 2	2013-03-05
Semiconductor Memory Device And Test Method Therefor App 20130003444 - ASAYAMA; Shinobu	2013-01-03
Semiconductor memory device and test method therefor Grant 8,284,591 - Asayama October 9, 2	2012-10-09
Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor Grant 8,218,352 - Asayama July 10, 2	2012-07-10
Semiconductor memory device including SRAM cell App 20110242882 - Asayama; Shinobu	2011-10-06
Semiconductor device and method for designing the same Grant 8,004,878 - Asayama , et al. August 23, 2	2011-08-23
Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor Grant 7,889,540 - Asayama February 15, 2	2011-02-15
Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor App 20110026312 - Asayama; Shinobu	2011-02-03
Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor App 20110024843 - Asayama; Shinobu	2011-02-03
Semiconductor memory device including SRAM cell having well power potential supply region provided therein Grant 7,825,471 - Asayama November 2, 2	2010-11-02
Memory cell and semiconductor memory device having thereof memory cell Grant 7,821,815 - Asayama October 26, 2	2010-10-26
Semiconductor storage device Grant 7,821,817 - Asayama October 26, 2	2010-10-26
Semiconductor Memory Device And Test Method Therefor App 20100220515 - Asayama; Shinobu	2010-09-02
Semiconductor device Grant 7,782,658 - Asayama August 24, 2	2010-08-24
Semiconductor device and method for designing the same App 20100073982 - Asayama; Shinobu ; et al.	2010-03-25
Semiconductor Device App 20090103346 - Asayama; Shinobu	2009-04-23
Semiconductor Storage Device App 20090086529 - ASAYAMA; Shinobu	2009-04-02
Semiconductor device including memory having nodes connected with continuous diffusion layer but isolated from each other by transistor App 20090067220 - Asayama; Shinobu	2009-03-12
Semiconductor memory device including SRAM cell having well power potential supply region provided therein App 20090067219 - Asayama; Shinobu	2009-03-12
Memory cell and semiconductor memory device having thereof memory cell App 20090059655 - Asayama; Shinobu	2009-03-05
Semiconductor storage device Grant 7,274,589 - Asayama , et al. September 25, 2	2007-09-25
Semiconductor storage device Grant 7,239,538 - Asayama , et al. July 3, 2	2007-07-03
Semiconductor storage device App 20060171192 - Asayama; Shinobu ; et al.	2006-08-03
Semiconductor storage device App 20060171193 - Asayama; Shinobu ; et al.	2006-08-03

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