Arya; Ankur
Patent Applications and Registrations
Patent applications and USPTO patent grants for Arya; Ankur.The latest application filed is for "composite sacrificial gate with etch selective layer".
- Arya; Ankur - Saratoga Springs NY
| Patent | Date |
|---|---|
| Fin reveal forming STI regions having convex shape between fins Grant 10,832,965 - Xu , et al. November 10, 2 | 2020-11-10 |
| Composite sacrificial gate with etch selective layer Grant 10,593,555 - Gao , et al. | 2020-03-17 |
| Composite Sacrificial Gate With Etch Selective Layer App 20190295852 - GAO; Qun ; et al. | 2019-09-26 |
| Fin Reveal Forming Sti Regions Having Convex Shape Between Fins App 20190214308 - Xu; Yiheng ; et al. | 2019-07-11 |
| Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devices Grant 10,269,932 - Arya , et al. | 2019-04-23 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.
| 