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Patent applications and USPTO patent grants for Arkun; Fevzi.The latest application filed is for "semiconductor materials and devices including iii-nitride layers integrated with scandium aluminum nitride".
Patent | Date |
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Binary III-nitride 3DEG heterostructure HEMT with graded channel for high linearity and high power applications Grant 11,404,541 - Moon , et al. August 2, 2 | 2022-08-02 |
Semiconductor Materials And Devices Including Iii-nitride Layers Integrated With Scandium Aluminum Nitride App 20220109064 - Arkun; Fevzi ;   et al. | 2022-04-07 |
Self-passivated Nitrogen-polar Iii-nitride Transistor App 20220069114 - DENNINGHOFF; Daniel ;   et al. | 2022-03-03 |
Binary III-Nitride 3DEG heterostructure HEMT with graded channel for high linearity and high power applications App 20210013307 - MOON; Jeong-sun ;   et al. | 2021-01-14 |
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