Archer; Donald M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Archer; Donald M..The latest application filed is for "structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses".

Company Profile

0.14.5

Archer; Donald M. - Santa Clara CA US
Archer; Donald M. - Sunnyvale CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Grant 8,629,027 - Bulucea , et al. January 14, 2	2014-01-14
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Grant 8,377,768 - Bulucea , et al. February 19, 2	2013-02-19
Configuration and fabrication of semiconductor structure using empty and filled wells Grant 8,304,835 - Bulucea , et al. November 6, 2	2012-11-06
Structure and Fabrication of Like-polarity Field-effect Transistors Having Different Configurations of Source/Drain Extensions, Halo Pockets, and Gate Dielectric Thicknesses App 20120264263 - Bulucea; Constantin ; et al.	2012-10-18
Fabrication of asymmetric field-effect transistors using L-shaped spacers Grant 8,101,479 - Parker , et al. January 24, 2	2012-01-24
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Grant 8,084,827 - Bulucea , et al. December 27, 2	2011-12-27
Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Grant 7,968,921 - Bulucea , et al. June 28, 2	2011-06-28
Fabrication and structure of asymmetric field-effect transistors using L-shaped spacers App 20100244106 - Parker; D. Courtney ; et al.	2010-09-30
Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions App 20100244131 - Bulucea; Constantin ; et al.	2010-09-30
Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses App 20100244149 - Bulucea; Constantin ; et al.	2010-09-30
Configuration and fabrication of semiconductor structure using empty and filled wells App 20100244128 - Bulucea; Constantin ; et al.	2010-09-30
Known default data state EPROM Grant 7,480,190 - Scheuerlein , et al. January 20, 2	2009-01-20
Trim bit circuit for band-gap reference Grant 6,605,979 - Archer August 12, 2	2003-08-12
Integrated inductor Grant 5,844,299 - Merrill , et al. December 1, 1	1998-12-01
Rail-to-rail input common mode range differential amplifier that operates with very low rail-to-rail voltages Grant 5,808,513 - Archer September 15, 1	1998-09-15
Rail-to-rail input common mode range differential amplifier that operates with very low rail-to-rail voltages Grant 5,764,101 - Archer June 9, 1	1998-06-09
Enhancement-depletion mode cascode current mirror Grant 5,311,115 - Archer May 10, 1	1994-05-10

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