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Plasma treatment method
Grant 7,550,180 - Shirasuna , et al. June 23, 2 | 2009-06-23 |
Plasma Treatment Method And Plasma Treatment Apparatus
App 20080271676 - Shirasuna; Toshiyasu ; et al. | 2008-11-06 |
Plasma treatment apparatus
Grant 6,761,128 - Shirasuna , et al. July 13, 2 | 2004-07-13 |
Plasma treatment method and plasma treatment apparatus
App 20040112864 - Shirasuna, Toshiyasu ; et al. | 2004-06-17 |
Electrophotographic image forming method and apparatus
Grant 6,670,089 - Ehara , et al. December 30, 2 | 2003-12-30 |
Plasma processing apparatus
Grant 6,649,020 - Okamura , et al. November 18, 2 | 2003-11-18 |
Electrophotographic image forming method and apparatus
App 20020150831 - Ehara, Toshiyuki ; et al. | 2002-10-17 |
Plasma treatment method and plasma treatment apparatus
App 20020038632 - Shirasuna, Toshiyasu ; et al. | 2002-04-04 |
Apparatus and method for forming deposited film
App 20020038630 - Otsuka, Takashi ; et al. | 2002-04-04 |
Vacuum processing methods
App 20020029818 - Murayama, Hitoshi ; et al. | 2002-03-14 |
Vacuum processing apparatus and vacuum processing method
Grant 6,250,251 - Akiyama , et al. June 26, 2 | 2001-06-26 |
Plasma processing apparatus and method
Grant 6,165,274 - Akiyama , et al. December 26, 2 | 2000-12-26 |
Light receiving member with non-single-crystal silicon layer containing Cr, Fe, Na, Ni and Mg
Grant 5,741,615 - Saitoh , et al. April 21, 1 | 1998-04-21 |
Deposited film forming apparatus
Grant 5,527,396 - Saitoh , et al. June 18, 1 | 1996-06-18 |
Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same
Grant 5,510,631 - Saito , et al. April 23, 1 | 1996-04-23 |
Photoelectric conversion element and power generation system using the same
Grant 5,429,685 - Saito , et al. July 4, 1 | 1995-07-04 |
Apparatus for repairing an electrically short-circuited semiconductor device
Grant 5,418,680 - Saito , et al. May 23, 1 | 1995-05-23 |
Photovoltaic device and a forming method thereof
Grant 5,417,770 - Saitoh , et al. May 23, 1 | 1995-05-23 |
Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1.times.10.sup.(19) (cm.sup.-3) or less
Grant 5,371,380 - Saito , et al. December 6, 1 | 1994-12-06 |
Photovoltaic device
Grant 5,342,452 - Saito , et al. August 30, 1 | 1994-08-30 |
Solar cell
Grant 5,284,525 - Saito , et al. February 8, 1 | 1994-02-08 |
Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
Grant 5,281,541 - Saito , et al. January 25, 1 | 1994-01-25 |
Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used
Grant 5,087,542 - Yamazaki , et al. February 11, 1 | 1992-02-11 |
Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film
Grant 5,024,706 - Kanai , et al. June 18, 1 | 1991-06-18 |
Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film
Grant 5,006,180 - Kanai , et al. April 9, 1 | 1991-04-09 |
Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
Grant 5,002,618 - Kanai , et al. March 26, 1 | 1991-03-26 |
Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film
Grant 5,002,617 - Kanai , et al. March 26, 1 | 1991-03-26 |
Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material
Grant 4,981,766 - Aoike , et al. January 1, 1 | 1991-01-01 |
Light receiving member having a divided-functionally structured light receiving layer having CGL and CTL for use in electrophotography
Grant 4,954,397 - Amada , et al. September 4, 1 | 1990-09-04 |
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