Anjum; Mohammed

Patent Applications and Registrations

Patent applications and USPTO patent grants for Anjum; Mohammed.The latest application filed is for "semiconductor field region implant methodology".

Company Profile

0.16.0

Anjum; Mohammed - Travis County TX
Anjum; Mohammed - Austin TX
Anjum; Mohammed - Boise ID

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor field region implant methodology Grant 6,482,719 - Anjum , et al. November 19, 2	2002-11-19
Active region implant methodology using indium to enhance short channel performance of a surface channel PMOS device Grant 6,331,458 - Anjum , et al. December 18, 2	2001-12-18
Method for producing a semiconductor gate conductor having an impurity migration barrier Grant 5,633,177 - Anjum May 27, 1	1997-05-27
Large tilt angle boron implant methodology for reducing subthreshold current in NMOS integrated circuit devices Grant 5,593,907 - Anjum , et al. January 14, 1	1997-01-14
Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer Grant 5,550,084 - Anjum , et al. August 27, 1	1996-08-27
Method for forming a silicide using ion beam mixing Grant 5,470,794 - Anjum , et al. November 28, 1	1995-11-28
Method and device for determining defects within a crystallographic substrate Grant 5,471,293 - Lowell , et al. November 28, 1	1995-11-28
Method for low energy implantation of argon to control titanium silicide formation Grant 5,444,024 - Anjum , et al. August 22, 1	1995-08-22
Method of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectric Grant 5,429,972 - Anjum , et al. July 4, 1	1995-07-04
Germanium implant for use with ultra-shallow junctions Grant 5,401,674 - Anjum , et al. March 28, 1	1995-03-28
Method of fabricating semiconductor gate electrode with fluorine migration barrier Grant 5,393,676 - Anjum , et al. February 28, 1	1995-02-28
Method of making a semiconductor having selectively enhanced field oxide areas Grant 5,372,951 - Anjum , et al. December 13, 1	1994-12-13
Method of making semiconductor structure with germanium implant for reducing short channel effects and subthreshold current near the substrate surface Grant 5,360,749 - Anjum , et al. November 1, 1	1994-11-01
Oxidation enhancement in narrow masked field regions of a semiconductor wafer Grant 5,358,894 - Fazan , et al. October 25, 1	1994-10-25
Semiconductor devices produced according to a method which reduces contact resistance at silicide/active area interfaces Grant 5,258,637 - Sandhu , et al. November 2, 1	1993-11-02
Method of reducing contact resistance at silicide/active area interfaces and semiconductor devices produced according to the method Grant 5,108,954 - Sandhu , et al. April 28, 1	1992-04-28

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