An; Hyeong-Geun

Patent Applications and Registrations

Patent applications and USPTO patent grants for An; Hyeong-Geun.The latest application filed is for "nonvolatile memory cells having phase changeable patterns therein for data storage".

Company Profile

0.29.31

An; Hyeong-Geun - Hwaseong-si N/A KR
An; Hyeong-Geun - Gyeonggi-do KR
An; Hyeong-Geun - Suwon-si KR
An; Hyeong-geun - Kyungki-do KR
An; Hyeong-Geun - Kyunggi-do KR
An, Hyeong-Geun - Gyeonggi-go KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Multi-level memory device using resistance material Grant 8,644,062 - Kim , et al. February 4, 2	2014-02-04
Memory cells including resistance variable material patterns of different compositions Grant 8,625,325 - An , et al. January 7, 2	2014-01-07
Nonvolatile Memory Cells Having Phase Changeable Patterns Therein For Data Storage App 20130234100 - An; Hyeong-Geun ; et al.	2013-09-12
Nonvolatile memory device using variable resistive element Grant 8,502,184 - An , et al. August 6, 2	2013-08-06
Nonvolatile memory cells having phase changeable patterns therein for data storage Grant 8,426,840 - An , et al. April 23, 2	2013-04-23
Methods of forming a phase change memory device Grant 8,187,914 - Lee , et al. May 29, 2	2012-05-29
Nonvolatile Memory Device Using Variable Resistive Element App 20110272663 - An; Hyeong-Geun ; et al.	2011-11-10
Phase changeable memory cell array region and method of forming the same Grant 8,039,298 - An , et al. October 18, 2	2011-10-18
Contact structure, a semiconductor device employing the same, and methods of manufacturing the same Grant 8,039,829 - Park , et al. October 18, 2	2011-10-18
Methods of forming contact structures and semiconductor devices fabricated using contact structures Grant 8,021,977 - Park , et al. September 20, 2	2011-09-20
Apparatus And Method For Fabricating A Phase-change Material Layer App 20110197812 - IM; Dong Hyun ; et al.	2011-08-18
Nonvolatile Memory Cells Having Phase Changeable Patterns Therein for Data Storage App 20110044098 - An; Hyeong-Geun ; et al.	2011-02-24
Memory Cells Including Resistance Variable Material Patterns Of Different Compositions App 20110032753 - An; Hyeong-Geun ; et al.	2011-02-10
Multi-Level Memory Device Using Resistance Material App 20110032752 - Kim; Ik-Soo ; et al.	2011-02-10
Methods of forming phase change memory devices having bottom electrodes Grant 7,824,954 - An , et al. November 2, 2	2010-11-02
Methods Of Forming A Phase Change Memory Device App 20100248442 - Lee; Jin-Il ; et al.	2010-09-30
Method of forming information storage pattern App 20100248460 - Lee; Jin-Il ; et al.	2010-09-30
Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory Grant 7,800,095 - An , et al. September 21, 2	2010-09-21
Phase change memory devices including carbon-containing adhesive pattern Grant 7,777,212 - An , et al. August 17, 2	2010-08-17
Phase change memory device and method of fabricating the same Grant 7,767,568 - An , et al. August 3, 2	2010-08-03
Methods Of Forming Contact Structures And Semiconductor Devices Fabricated Using Contact Structures App 20100144138 - Park; Young-Lim ; et al.	2010-06-10
Methods of forming multi-level cell of semiconductor memory App 20100093130 - Oh; Gyu-Hwan ; et al.	2010-04-15
Phase Changeable Memory Cell Array Region And Method Of Forming The Same App 20100055831 - An; Hyeong-Geun ; et al.	2010-03-04
Phase changeable memory cell array region and method of forming the same Grant 7,638,787 - An , et al. December 29, 2	2009-12-29
Phase change memory device and method of forming the same Grant 7,638,788 - Ahn , et al. December 29, 2	2009-12-29
Methods Of Forming Chalcogenide Films And Methods Of Manufacturing Memory Devices Using The Same App 20090263934 - AN; Hyeong-Geun ; et al.	2009-10-22
Contact Structure, A Semiconductor Device Employing The Same, And Methods Of Manufacturing The Same App 20090243117 - Park; Jeong-Hee ; et al.	2009-10-01
Phase-changeable memory device and method of manufacturing the same Grant 7,563,639 - Shin , et al. July 21, 2	2009-07-21
PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same Grant 7,479,405 - Park , et al. January 20, 2	2009-01-20
Methods of Forming Phase Change Memory Devices Having Bottom Electrodes App 20090017577 - An; Hyeong-Geun ; et al.	2009-01-15
Phase change memory device and method of fabricating the same App 20080237566 - AN; Hyeong-Geun ; et al.	2008-10-02
Phase Change Memory Devices Including Carbon-containing Adhesive Pattern, And Methods Of Fabricating The Same App 20080173858 - An; Hyeong-Geun ; et al.	2008-07-24
Phase-change Memory Device Having Phase Change Material Pattern Shared Between Adjacent Cells And Electronic Product Including The Phase-change Memory App 20080149910 - AN; Hyeong-geun ; et al.	2008-06-26
Phase change memory device and method of forming the same App 20080093590 - Ahn; Dong-Ho ; et al.	2008-04-24
PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same App 20080070344 - Park; Jae-Hyun ; et al.	2008-03-20
PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same Grant 7,309,885 - Park , et al. December 18, 2	2007-12-18
Phase-changeable Memory Device And Method Of Manufacturing The Same App 20070243659 - SHIN; Hee-Ju ; et al.	2007-10-18
Phase changeable memory cell array region and method of forming the same App 20070111440 - An; Hyeong-Geun ; et al.	2007-05-17
Ferroelectric capacitors including a seed conductive film Grant 7,064,365 - An , et al. June 20, 2	2006-06-20
PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same App 20060076548 - Park; Jae-Hyun ; et al.	2006-04-13
Integrated circuit devices having dielectric regions protected with multi-layer insulation structures Grant 7,023,037 - Cho , et al. April 4, 2	2006-04-04
Ferroelectric memory device and method of forming the same Grant 6,815,226 - Lee , et al. November 9, 2	2004-11-09
Method of fabricating a ferroelectric memory device Grant 6,815,227 - An November 9, 2	2004-11-09
Integrated circuit devices having dielectric regions protected with multi-layer insulation structures and methods of fabricating same App 20040183116 - Cho, Hag-ju ; et al.	2004-09-23
Ferroelectric memory device and method of fabricating the same App 20040137648 - An, Hyeong-Geun	2004-07-15
Ferroelectric capacitors including a seed conductive film and methods for manufacturing the same App 20040135182 - An, Hyeong-Geun ; et al.	2004-07-15
Method of fabricating integrated circuit devices having dielectric regions protected with multi-layer insulation structures Grant 6,740,531 - Cho , et al. May 25, 2	2004-05-25
Ferroelectric memory device and method of fabricating the same Grant 6,717,197 - An April 6, 2	2004-04-06
FRAM and method of fabricating the same Grant 6,686,620 - An , et al. February 3, 2	2004-02-03
Ferroelectric memory device and method of forming the same App 20040005724 - Lee, Kyu-Mann ; et al.	2004-01-08
Ferroelectric memory device and method of forming the same Grant 6,664,578 - Lee , et al. December 16, 2	2003-12-16
Ferroelectric memory device and method of fabricating the same App 20030057462 - An, Hyeong-Geun	2003-03-27
Ferroelectric memory device and method of forming the same App 20030035313 - Lee, Kyu-Mann ; et al.	2003-02-20
FRAM and method of fabricating the same App 20020153550 - An, Hyeong-Geun ; et al.	2002-10-24
Integrated circuit devices having dielectric regions protected with multi-layer insulation structures and methods of fabricating same App 20020021544 - Cho, Hag-ju ; et al.	2002-02-21

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