Amstatt; Benoit

Patent Applications and Registrations

Patent applications and USPTO patent grants for Amstatt; Benoit.The latest application filed is for "optoelectronic device comprising three-dimensional diodes".

Company Profile

6.9.8

Amstatt; Benoit - Grenoble FR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Optoelectronic device comprising three-dimensional diodes Grant 10,886,427 - Dupont , et al. January 5, 2	2021-01-05
Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements Grant 10,801,129 - Amstatt , et al. October 13, 2	2020-10-13
Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps Grant 10,636,653 - Hyot , et al.	2020-04-28
Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide Grant 10,340,138 - Dupont , et al.	2019-07-02
Optoelectronic Device Comprising Three-dimensional Diodes App 20190172970 - DUPONT; Florian ; et al.	2019-06-06
Nucleation Structure Suitable For Epitaxial Growth Of Three-dimensional Semiconductor Elements App 20190153619 - AMSTATT; Benoit ; et al.	2019-05-23
Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device Grant 9,991,342 - Hyot , et al. June 5, 2	2018-06-05
Electronic Device With A Wire Element Extending From An Electroconductive Layer Comprising Zirconium Carbide Or Hafnium Carbide App 20170345652 - Dupont; Florian ; et al.	2017-11-30
Optoelectronic device and method for manufacturing same Grant 9,728,679 - Dechoux , et al. August 8, 2	2017-08-08
Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps Grant 9,698,011 - Hyot , et al. July 4, 2	2017-07-04
Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device Grant 9,679,966 - Hyot , et al. June 13, 2	2017-06-13
Method for manufacturing a semiconductor structure and semiconductor component comprising such a semiconductor structure Grant 9,559,256 - Amstatt , et al. January 31, 2	2017-01-31
Method For Manufacturing A Semiconductor Structure And Semiconductor Component Comprising Such A Semiconductor Structure App 20160141451 - AMSTATT; Benoit ; et al.	2016-05-19
Electronic Device Containing Nanowire(s), Equipped With A Transition Metal Buffer Layer, Process For Growing At Least One Nanowire, And Process For Manufacturing A Device App 20150295041 - Hyot; Berangere ; et al.	2015-10-15
Process For Growing At Least One Nanowire Using A Transition Metal Nitride Layer Obtained In Two Steps App 20150279672 - Hyot; Berangere ; et al.	2015-10-01
Electronic Device Containing Nanowire(s), Equipped with a Transition Metal Buffer Layer, Process for Growing at Least One Nanowire, and Process for Manufacturing a Device App 20140117308 - Hyot; Berangere ; et al.	2014-05-01
Process for Growing at Least One Nanowire Using a Transition Metal Nitride Layer Obtained in Two Steps App 20140120637 - Hyot; Berangere ; et al.	2014-05-01

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