Amano; Yoshinari

Patent Applications and Registrations

Patent applications and USPTO patent grants for Amano; Yoshinari.The latest application filed is for "method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions".

Company Profile

0.9.4

Amano; Yoshinari - Tokyo JP
Amano; Yoshinari - Sakata-shi JP
Amano; Yoshinari - Sakata JP
Amano; Yoshinari - Yamagata JP
Amano; Yoshinari - Itami JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Composite material, method for producing same and member using same Grant 7,547,412 - Itoh , et al. June 16, 2	2009-06-16
Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions App 20060246314 - Osada; Mitsuo ; et al.	2006-11-02
Method of producing a heat dissipation substrate of molybdenum powder impregnated with copper with rolling in primary and secondary directions Grant 7,083,759 - Osada , et al. August 1, 2	2006-08-01
Composite material, method for producing same and member using same App 20050287387 - Itoh, Masayuki ; et al.	2005-12-29
Semiconductor package and method for producing heat-radiating substrate for it Grant 6,926,861 - Hirayama , et al. August 9, 2	2005-08-09
Semiconductor package and method for producing heat-radiating substrate for it App 20040056352 - Hirayama, Norio ; et al.	2004-03-25
Semiconductor package and method for producing heat-radiating substrate for it Grant 6,693,353 - Hirayama , et al. February 17, 2	2004-02-17
Rotary anode for X-ray tube comprising an Mo-containing layer and a W-containing layer laminated to each other and method of producing the same App 20010014568 - Itoh, Masayuki ; et al.	2001-08-16
Method of producing a tungsten heavy alloy product Grant 5,342,573 - Amano , et al. August 30, 1	1994-08-30
Substrate for semiconductor apparatus Grant 5,099,310 - Osada , et al. * March 24, 1	1992-03-24
Substrate for semiconductor apparatus having a composite material Grant 5,086,333 - Osada , et al. February 4, 1	1992-02-04
Electrical contact material Grant 4,072,515 - Motoyoshi , et al. February 7, 1	1978-02-07
Electrical contact material Grant 4,050,930 - Motoyoshi , et al. September 27, 1	1977-09-27

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