loadpatents
name:-0.0038120746612549
name:-0.016991138458252
name:-0.0024471282958984
Allerman; Andrew A. Patent Filings

Allerman; Andrew A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Allerman; Andrew A..The latest application filed is for "high voltage gallium nitride vertical pn diode".

Company Profile
2.17.3
  • Allerman; Andrew A. - Tijeras NM
  • Allerman; Andrew A. - Albuquerque NM
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
High Voltage Gallium Nitride Vertical PN Diode
App 20220165888 - Yates; Luke ;   et al.
2022-05-26
Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
Grant 10,553,697 - Armstrong , et al. Fe
2020-02-04
Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
Grant 10,388,753 - Armstrong , et al. A
2019-08-20
Diode and method of making the same
Grant 9,917,149 - Dickerson , et al. March 13, 2
2018-03-13
Vertical III-nitride thin-film power diode
Grant 9,595,616 - Wierer, Jr. , et al. March 14, 2
2017-03-14
Selective layer disordering in III-nitrides with a capping layer
Grant 9,368,677 - Wierer, Jr. , et al. June 14, 2
2016-06-14
High extraction efficiency ultraviolet light-emitting diode
Grant 9,196,788 - Wierer , et al. November 24, 2
2015-11-24
Laterally injected light-emitting diode and laser diode
Grant 9,059,356 - Miller , et al. June 16, 2
2015-06-16
Laterally-Injected Light-Emitting Diode and Laser Diode
App 20150144871 - Miller; Mary A. ;   et al.
2015-05-28
Selective Layer Disordering in III-Nitrides with a Capping Layer
App 20150079770 - Wierer, JR.; Jonathan J. ;   et al.
2015-03-19
Impurity-induced disorder in III-nitride materials and devices
Grant 8,895,335 - Wierer, Jr. , et al. November 25, 2
2014-11-25
Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films
Grant 8,349,633 - Allerman , et al. January 8, 2
2013-01-08
Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films
Grant 7,915,626 - Allerman , et al. March 29, 2
2011-03-29
Frequency-doubled vertical-external-cavity surface-emitting laser
Grant 6,393,038 - Raymond , et al. May 21, 2
2002-05-21
Embedded high-contrast distributed grating structures
Grant 6,365,428 - Zubrzycki , et al. April 2, 2
2002-04-02
InGaAsN/GaAs heterojunction for multi-junction solar cells
Grant 6,252,287 - Kurtz , et al. June 26, 2
2001-06-26
High gain photoconductive semiconductor switch having tailored doping profile zones
Grant 6,248,992 - Baca , et al. June 19, 2
2001-06-19
Method of making AlInSb by metal-organic chemical vapor deposition
Grant 6,071,109 - Biefeld , et al. June 6, 2
2000-06-06
Infrared light sources with semimetal electron injection
Grant 5,995,529 - Kurtz , et al. November 30, 1
1999-11-30

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.

© 2024 USPTO.report | Privacy Policy | Resources | RSS Feed of Trademarks | Trademark Filings Twitter Feed