| Patent | Date |
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Semiconductor Light-Emitting Device
App 20220285580 - Okuno; Koji ; et al. | 2022-09-08 |
Semiconductor Device And Method For Producing Semiconductor Device
App 20220246789 - OKUNO; Koji ; et al. | 2022-08-04 |
Semiconductor Device And Method For Producing Semiconductor Device
App 20220246793 - OKUNO; Koji ; et al. | 2022-08-04 |
Semiconductor multilayer film reflecting mirror and vertical cavity light-emitting element
Grant 11,146,040 - Takeuchi , et al. October 12, 2 | 2021-10-12 |
Semiconductor Multilayer Film Reflecting Mirror And Vertical Cavity Light-emitting Element
App 20210111538 - TAKEUCHI; Tetsuya ; et al. | 2021-04-15 |
Semiconductor Light Emitting Device And Manufacturing Method Of Semiconductor Light Emitting Device
App 20210074877 - Kamiyama; Satoshi ; et al. | 2021-03-11 |
Group III nitride semiconductor light-emitting device and production method therefor
Grant 10,833,223 - Takeuchi , et al. November 10, 2 | 2020-11-10 |
Nitride Semiconductor Crystal And Method Of Fabricating The Same
App 20200144451 - TAKEUCHI; Tetsuya ; et al. | 2020-05-07 |
Nitride semiconductor multilayer film reflector and light-emitting device using the same
Grant 10,593,831 - Takeuchi , et al. | 2020-03-17 |
Semiconductor multilayer film reflecting mirror, vertical cavity light-emitting element using the reflecting mirror, and methods for manufacturing the reflecting mirror and the element
Grant 10,411,438 - Takeuchi , et al. Sept | 2019-09-10 |
Group Iii Nitride Semiconductor Light-emitting Device And Production Method Therefor
App 20190148592 - TAKEUCHI; Tetsuya ; et al. | 2019-05-16 |
Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element
Grant 10,116,120 - Takeuchi , et al. October 30, 2 | 2018-10-30 |
Semiconductor Multilayer Film Reflecting Mirror, Vertical Cavity Light-emitting Element Using The Reflecting Mirror, And Methods For Manufacturing The Reflecting Mirror And The Element
App 20180166855 - TAKEUCHI; Tetsuya ; et al. | 2018-06-14 |
Semiconductor Multilayer Film Mirror, Vertical Cavity Type Light-emitting Element Using The Mirror, And Methods For Manufacturing The Mirror And The Element
App 20180166856 - TAKEUCHI; Tetsuya ; et al. | 2018-06-14 |
Nitride semiconductor light-emitting device with periodic gain active layers
Grant 9,847,449 - Matsui , et al. December 19, 2 | 2017-12-19 |
Method of manufacturing n-p-n nitride-semiconductor light-emitting device, and n-p-n nitride-semiconductor light-emitting device
Grant 9,716,209 - Takeuchi , et al. July 25, 2 | 2017-07-25 |
Nitride Semiconductor Crystal And Method Of Fabricating The Same
App 20170155016 - TAKEUCHI; Tetsuya ; et al. | 2017-06-01 |
Nitride semiconductor light emitting device and method of fabricating the same
Grant 9,666,753 - Takeuchi , et al. May 30, 2 | 2017-05-30 |
Method Of Manufacturing N-p-n Nitride-semiconductor Light-emitting Device, And N-p-n Nitride-semiconductor Light-emitting Device
App 20160365479 - TAKEUCHI; Tetsuya ; et al. | 2016-12-15 |
Nitride Semiconductor Light Emitting Device And Method Of Fabricating The Same
App 20160308094 - TAKEUCHI; Tetsuya ; et al. | 2016-10-20 |
Nitride semiconductor light-emitting device
Grant 9,437,775 - Takeuchi , et al. September 6, 2 | 2016-09-06 |
Nitride Semiconductor Light-emitting Device With Periodic Gain Active Layers
App 20160163919 - MATSUI; Kenjo ; et al. | 2016-06-09 |
Nitride Semiconductor Light-emitting Device
App 20160149078 - TAKEUCHI; Tetsuya ; et al. | 2016-05-26 |
Nitride Semiconductor Multilayer Film Reflector And Light-emitting Device Using The Same
App 20160056333 - TAKEUCHI; Tetsuya ; et al. | 2016-02-25 |
Nitride Semiconductor Crystal And Method Of Fabricating The Same
App 20160020359 - TAKEUCHI; Tetsuya ; et al. | 2016-01-21 |
Light emitting diode element with porous SiC emitting by donor acceptor pair
Grant 9,099,597 - Kamiyama , et al. August 4, 2 | 2015-08-04 |
Method for manufacturing semiconductor device
Grant 9,029,174 - Iwaya , et al. May 12, 2 | 2015-05-12 |
Semiconductor Light Emitting Element
App 20150091039 - Kamiyama; Satoshi ; et al. | 2015-04-02 |
Semiconductor light emitting element
Grant 8,941,136 - Kamiyama , et al. January 27, 2 | 2015-01-27 |
Method For Manufacturing Semiconductor Device
App 20130330913 - Iwaya; Motoaki ; et al. | 2013-12-12 |
Semiconductor Light Emitting Element
App 20120228656 - Kamiyama; Satoshi ; et al. | 2012-09-13 |
Light Emitting Diode Element And Method For Producing The Same
App 20120037923 - Kamiyama; Satoshi ; et al. | 2012-02-16 |
Light-emitting semiconductor device
Grant 7,985,964 - Kamiyama , et al. July 26, 2 | 2011-07-26 |
SiC crystal and semiconductor device
Grant 7,855,385 - Kamiyama , et al. December 21, 2 | 2010-12-21 |
Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element
Grant 7,756,189 - Kamiyama , et al. July 13, 2 | 2010-07-13 |
Semiconductor and method of semiconductor fabrication
Grant 7,732,826 - Kamiyama , et al. June 8, 2 | 2010-06-08 |
Method for fabricating a semiconductor device and semiconductor device
Grant 7,612,381 - Kamiyama , et al. November 3, 2 | 2009-11-03 |
Ultraviolet light receiving element
App 20090166674 - Iwaya; Motoaki ; et al. | 2009-07-02 |
Light-emitting Semiconductor Device
App 20090065763 - Kamiyama; Satoshi ; et al. | 2009-03-12 |
SiC crystal and semiconductor device
App 20080277670 - Kamiyama; Satoshi ; et al. | 2008-11-13 |
Two-light flux interference exposure device, two-light flux interference exposure method, semiconductor light emitting element manufacturing method, and semiconductor light emitting element
App 20080123713 - Kamiyama; Satoshi ; et al. | 2008-05-29 |
Filter function-equipped optical sensor and flame sensor
Grant 7,361,948 - Hirano , et al. April 22, 2 | 2008-04-22 |
Diboride single crystal substrate, semiconductor device using this and its manufacturing method
Grant 7,297,989 - Otani , et al. November 20, 2 | 2007-11-20 |
Phoshor and light-emitting diode
App 20070176531 - Kinoshita; Hiroyuki ; et al. | 2007-08-02 |
Method for fabricating a semiconductor device and semiconductor device
App 20070145557 - Kamiyama; Satoshi ; et al. | 2007-06-28 |
Semiconductor and method of semiconductor fabrication
App 20070114560 - Kamiyama; Satoshi ; et al. | 2007-05-24 |
Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
Grant 7,183,578 - Akasaki , et al. February 27, 2 | 2007-02-27 |
Filter function-equipped optical sensor and flame sensor
App 20070008539 - Hirano; Akira ; et al. | 2007-01-11 |
Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
App 20060145166 - Akasaki; Isamu ; et al. | 2006-07-06 |
Diboride single crystal substrate, semiconductor device using this and its manufacturing method
App 20060102924 - Otani; Shigeki ; et al. | 2006-05-18 |
Sapphire substrate, epitaxial substrate and semiconductor device
App 20060043396 - Tsuda; Michinobu ; et al. | 2006-03-02 |
Method for manufacturing a gallium nitride group compound semiconductor
Grant 6,984,536 - Manabe , et al. January 10, 2 | 2006-01-10 |
Methods for manufacturing a light-emitting device
Grant 6,962,828 - Koide , et al. November 8, 2 | 2005-11-08 |
Group III-nitride semiconductor substrate and its manufacturing method
App 20050066885 - Kamiyama, Satoshi ; et al. | 2005-03-31 |
Nitride semiconductor device with reduced polarization fields
Grant 6,849,472 - Krames , et al. February 1, 2 | 2005-02-01 |
Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus
App 20050006635 - Akasaki, Isamu ; et al. | 2005-01-13 |
Method for manufacturing a gallium nitride group compound semiconductor
Grant 6,830,992 - Manabe , et al. December 14, 2 | 2004-12-14 |
Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
Grant 6,829,273 - Amano , et al. December 7, 2 | 2004-12-07 |
Nitride Semiconductor Layer Structure And A Nitride Semiconductor Laser Incorporating A Portion Of Same
App 20040213309 - Amano, Hiroshi ; et al. | 2004-10-28 |
Nitride semiconductor device
Grant 6,690,700 - Takeuchi , et al. February 10, 2 | 2004-02-10 |
Method for producing a light-emitting semiconductor device
Grant 6,607,595 - Manabe , et al. August 19, 2 | 2003-08-19 |
Epitaxial aluminium-gallium nitride semiconductor substrate
Grant 6,534,791 - Hayashi , et al. March 18, 2 | 2003-03-18 |
Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same
App 20020094002 - Amano, Hiroshi ; et al. | 2002-07-18 |
Nitride semiconductor device with reduced polarization fields
App 20020084467 - Krames, Michael R. ; et al. | 2002-07-04 |
Method for manufacturing a gallium nitride group compound semiconductor
App 20020060326 - Manabe, Katsuhide ; et al. | 2002-05-23 |
Light-emitting semiconductor device using gallium nitride group compound
Grant 6,362,017 - Manabe , et al. March 26, 2 | 2002-03-26 |
Method For Manufacturing Group Iii Nitride Compound Semiconductor Laser Diodes
App 20020006726 - YAMASAKI, SHIRO ; et al. | 2002-01-17 |
Nitride semiconductor device
App 20010038656 - Takeuchi, Tetsuya ; et al. | 2001-11-08 |
Method of fabricating a group III-V semiconductor light emitting device with reduced piezoelectric fields and increased efficiency
App 20010010372 - Takeuchi, Tetsuya ; et al. | 2001-08-02 |
Light emitting semiconductor device using gallium nitride group compound
Grant 6,249,012 - Manabe , et al. June 19, 2 | 2001-06-19 |
Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency
Grant 6,229,151 - Takeuchi , et al. May 8, 2 | 2001-05-08 |
Light emitting semiconductor device using nitrogen-Group III compound
Grant 5,905,276 - Manabe , et al. May 18, 1 | 1999-05-18 |
Group III nitride compound semiconductor laser diodes
Grant 5,889,806 - Nagai , et al. March 30, 1 | 1999-03-30 |
Light-emitting semiconductor device using gallium nitride compound
Grant 5,862,167 - Sassa , et al. January 19, 1 | 1999-01-19 |
Method for producing group III nitride compound semiconductor substrates using ZnO release layers
Grant 5,846,844 - Akasaki , et al. December 8, 1 | 1998-12-08 |
Process for producing a luminous element of group III nitride semi-conductor
Grant 5,834,326 - Miyachi , et al. November 10, 1 | 1998-11-10 |
Sapphireless group III nitride semiconductor and method for making same
Grant 5,620,557 - Manabe , et al. April 15, 1 | 1997-04-15 |
Group III nitride compound semiconductor laser diode and method for producing same
Grant 5,604,763 - Kato , et al. February 18, 1 | 1997-02-18 |
Gallum nitride group compound semiconductor laser diode
Grant 5,583,879 - Yamazaki , et al. December 10, 1 | 1996-12-10 |
Method for producing a luminous element of III-group nitride
Grant 5,496,766 - Amano , et al. March 5, 1 | 1996-03-05 |
Method of fabricating a gallium nitride based semiconductor device with an aluminum and nitrogen containing intermediate layer
Grant 5,389,571 - Takeuchi , et al. February 14, 1 | 1995-02-14 |
Compound semiconductor vapor phase epitaxial device
Grant 5,370,738 - Watanabe , et al. December 6, 1 | 1994-12-06 |
Light-emitting semiconductor device using gallium nitride group compound
Grant 5,281,830 - Kotaki , et al. January 25, 1 | 1994-01-25 |
Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
Grant 5,278,433 - Manabe , et al. January 11, 1 | 1994-01-11 |
Gallium nitride group compound semiconductor laser diode
Grant 5,247,533 - Okazaki , et al. September 21, 1 | 1993-09-21 |
Gallium nitride base semiconductor device
Grant 5,239,188 - Takeuchi , et al. August 24, 1 | 1993-08-24 |
Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
Grant 5,218,216 - Manabe , et al. June 8, 1 | 1993-06-08 |
Substrate for growing gallium nitride compound-semiconductor device and light emitting diode
Grant 5,122,845 - Manabe , et al. June 16, 1 | 1992-06-16 |
Process for growing III-V compound semiconductors on sapphire using a buffer layer
Grant 4,855,249 - Akasaki , et al. August 8, 1 | 1989-08-08 |
Method of making a gallium nitride light-emitting diode
Grant 4,476,620 - Ohki , et al. October 16, 1 | 1984-10-16 |
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Grant 4,473,938 - Kobayashi , et al. October 2, 1 | 1984-10-02 |
GaN Electroluminescent semiconductor device and method for making the same
Grant 4,408,217 - Kobayashi , et al. October 4, 1 | 1983-10-04 |
Gallium nitride light-emitting element and method of manufacturing the same
Grant 4,396,929 - Ohki , et al. August 2, 1 | 1983-08-02 |
Electroluminescent element
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