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name:-0.0098378658294678
name:-0.00049805641174316
Akasaka; Yoichi Patent Filings

Akasaka; Yoichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Akasaka; Yoichi.The latest application filed is for "optical signal-to-noise ratio monitor and method for measuring optical signal-to-noise ratio".

Company Profile
0.9.3
  • Akasaka; Yoichi - Allen TX
  • Akasaka; Yoichi - Itami JP
  • Akasaka; Yoichi - Hyogo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Optical signal-to-noise ratio monitor and method for measuring optical signal to-noise ratio
Grant 10,020,878 - Oda , et al. July 10, 2
2018-07-10
Optical Signal-to-noise Ratio Monitor And Method For Measuring Optical Signal-to-noise Ratio
App 20160308611 - ODA; Shoichiro ;   et al.
2016-10-20
Low noise optical phase-sensitive amplifier for dual-polarization modulation formats
Grant 9,246,624 - Yang , et al. January 26, 2
2016-01-26
Optical phase-sensitive amplifier for dual-polarization modulation formats
Grant 9,030,730 - Yang , et al. May 12, 2
2015-05-12
Optical Phase-sensitive Amplifier For Dual-polarization Modulation Formats
App 20140198375 - Yang; Jeng-Yuan ;   et al.
2014-07-17
System and method for traffic distribution in an optical network
Grant 7,684,706 - Akasaka , et al. March 23, 2
2010-03-23
System and Method for Traffic Distribution in an Optical Network
App 20070092249 - Akasaka; Yoichi ;   et al.
2007-04-26
Method of manufacturing a semiconductor device
Grant 4,948,742 - Nishimura , et al. August 14, 1
1990-08-14
Semiconductor device
Grant 4,899,206 - Sakurai , et al. February 6, 1
1990-02-06
Stacked semiconductor device
Grant 4,797,723 - Nishimura , et al. January 10, 1
1989-01-10
Method of fabricating semiconductor devices
Grant 4,448,632 - Akasaka May 15, 1
1984-05-15
Process for preparing semiconductor device having active base region implanted therein using walled emitter opening and the edge of dielectric isolation zone
Grant 4,441,932 - Akasaka , et al. April 10, 1
1984-04-10

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