Aigo; Takashi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Aigo; Takashi.The latest application filed is for "epitaxial silicon carbide single crystal wafer and process for producing the same".

Company Profile

5.13.17

Aigo; Takashi - Tokyo JP
Aigo; Takashi - Sagamihara JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Epitaxial silicon carbide single crystal wafer and process for producing the same Grant 11,114,295 - Aigo , et al. September 7, 2	2021-09-07
Epitaxial Silicon Carbide Single Crystal Wafer And Process For Producing The Same App 20200312656 - Aigo; Takashi ; et al.	2020-10-01
Epitaxial silicon carbide single crystal wafer and process for producing the same Grant 10,727,047 - Aigo , et al.	2020-07-28
Method for producing epitaxial silicon carbide single crystal wafer Grant 10,626,520 - Aigo , et al.	2020-04-21
Method for producing epitaxial silicon carbide wafers Grant 10,450,672 - Aigo , et al. Oc	2019-10-22
Epitaxial growth method for silicon carbide Grant 10,435,813 - Ito , et al. O	2019-10-08
Epitaxial Growth Method For Silicon Carbide App 20180266012 - ITO; Wataru ; et al.	2018-09-20
Method For Producing Epitaxial Silicon Carbide Single Crystal Wafer App 20180216251 - AIGO; Takashi ; et al.	2018-08-02
Method for producing epitaxial silicon carbide wafer Grant 9,957,639 - Aigo , et al. May 1, 2	2018-05-01
Epitaxial Silicon Carbide Single Crystal Wafer And Process For Producing The Same App 20170365463 - AIGO; Takashi ; et al.	2017-12-21
Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same Grant 9,691,607 - Aigo , et al. June 27, 2	2017-06-27
Method For Producing Epitaxial Silicon Carbide Wafers App 20170159208 - AIGO; Takashi ; et al.	2017-06-08
Method For Producing Epitaxial Silicon Carbide Wafer App 20160251775 - AIGO; Takashi ; et al.	2016-09-01
Method For Manufacturing Sic Single-crystal Substrate For Epitaxial Sic Wafer, And Sic Single-crystal Substrate For Epitaxial Sic Wafer App 20150361585 - AIGO; Takashi ; et al.	2015-12-17
Epitaxial Silicon Carbide Monocrystalline Substrate And Method Of Production Of Same App 20150075422 - Aigo; Takashi ; et al.	2015-03-19
Production process of epitaxial silicon carbide single crystal substrate Grant 8,927,396 - Aigo , et al. January 6, 2	2015-01-06
Epitaxial silicon carbide single crystal substrate and process for producing the same Grant 8,901,570 - Aigo , et al. December 2, 2	2014-12-02
Epitaxial Silicon Carbide Single Crystal Substrate And Method For Producing Same App 20130320357 - Aigo; Takashi ; et al.	2013-12-05
Production Process Of Epitaxial Silicon Carbide Single Crystal Substrate App 20130217213 - Aigo; Takashi ; et al.	2013-08-22
Epitaxial Silicon Carbide Single Crystal Substrate And Process For Producing The Same App 20130049014 - Aigo; Takashi ; et al.	2013-02-28
Process For Producing Epitaxial Silicon Carbide Single Crystal Substrate And Epitaxial Silicon Carbide Single Crystal Substrate Obtained By The Same App 20130029158 - Aigo; Takashi ; et al.	2013-01-31
Epitaxial silicon carbide monocrystalline substrate and method of production of same App 20110278596 - Aigo; Takashi ; et al.	2011-11-17
Method of growing compound semiconductor on silicon wafer Grant 5,438,951 - Tachikawa , et al. August 8, 1	1995-08-08

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