AHN; Jun Ku

Patent Applications and Registrations

Patent applications and USPTO patent grants for AHN; Jun Ku.The latest application filed is for "pvd chamber shield structure including improved cotaing layer or shield".

Company Profile

2.3.12

AHN; Jun Ku - Icheon KR
Ahn; Jun Ku - Hwaseong KR
AHN; Jun-ku - Hwaseong-si KR
Ahn; Jun-Ku - Daejeon KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Pvd Chamber Shield Structure Including Improved Cotaing Layer Or Shield App 20220310372 - JUNG; Gwang Sun ; et al.	2022-09-29
Semiconductor Device And Method Of Manufacturing Semiconductor Device App 20220254997 - AHN; Jun Ku ; et al.	2022-08-11
Sputtering Target Including Carbon-doped Gst And Method For Fabricating Electronic Device Using The Same App 20220190241 - AHN; Jun Ku	2022-06-16
Semiconductor Device And Manufacturing Method Of The Semiconductor Device App 20220165791 - KIM; Hyung Keun ; et al.	2022-05-26
Electronic Device And Method Of Fabricating The Same App 20210280782 - AHN; Jun Ku	2021-09-09
Sputtering target and manufacturing method thereof Grant 10,995,401 - Ahn May 4, 2	2021-05-04
Chalcogenide Material, Variable Resistance Memory Device And Electronic Device App 20210083185 - JUNG; Gwang Sun ; et al.	2021-03-18
Sputtering Target And Manufacturing Method Thereof App 20200181761 - AHN; Jun Ku	2020-06-11
Method Of Forming Tungsten Film And Method Of Fabricating Semiconductor Device Using The Same App 20170309491 - AHN; Jun-ku ; et al.	2017-10-26
Method of manufacturing a phase change memory device Grant 9,318,700 - Wu , et al. April 19, 2	2016-04-19
Method Of Manufacturing A Phase Change Memory Device App 20150364678 - WU; ZHE ; et al.	2015-12-17
Method Of Filling An Opening And Method Of Manufacturing A Phase-change Memory Device Using The Same App 20150325787 - AHN; Jun-Ku ; et al.	2015-11-12
Method for fabricating indium (In)-antimony (Sb)-tellurium (Te) nanowires and phase-change memory device comprising the nanowires Grant 8,154,907 - Yoon , et al. April 10, 2	2012-04-10
METHOD FOR FABRICATING INDIUM (In)-ANTIMONY (Sb)-TELLURIUM (Te) NANOWIRES AND PHASE-CHANGE MEMORY DEVICE COMPRISING THE NANOWIRES App 20110182115 - Yoon; Soon-Gil ; et al.	2011-07-28

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