Ahn; ByungHoon

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ahn; ByungHoon.The latest application filed is for "semiconductor device and method of forming rf fem with lc filter and ipd filter over substrate".

Company Profile

0.10.7

Ahn; ByungHoon - Kyungki-Do KR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor device and method of forming RF FEM with LC filter and IPD filter over substrate Grant 9,704,857 - Kim , et al. July 11, 2	2017-07-11
Semiconductor device and method of forming RF FEM and RF transceiver in semiconductor package Grant 9,190,340 - Lee , et al. November 17, 2	2015-11-17
Semiconductor device with cross-talk isolation using M-cap Grant 9,082,638 - Lee , et al. July 14, 2	2015-07-14
Semiconductor device and method of forming shielding layer around back surface and sides of semiconductor wafer containing IPD structure Grant 8,896,115 - Lee , et al. November 25, 2	2014-11-25
Semiconductor Device and Method of Forming RF FEM with LC Filter and IPD Filter Over Substrate App 20130069197 - Kim; HyunTai ; et al.	2013-03-21
Semiconductor device and method of forming RF FEM with IC filter and IPD filter over substrate Grant 8,349,648 - Kim , et al. January 8, 2	2013-01-08
Semiconductor Device and Method of Forming RF FEM and RF Transceiver in Semiconductor Package App 20120319302 - Lee; YongTaek ; et al.	2012-12-20
Semicinductor Device with Cross-Talk Isolation Using M-CAP and Method Thereof App 20120299149 - Lee; YongTaek ; et al.	2012-11-29
Semiconductor device with cross-talk isolation using M-cap and method thereof Grant 8,269,308 - Lee , et al. September 18, 2	2012-09-18
Semiconductor Device and Method of Forming Shielding Layer Around Back Surface and Sides of Semiconductor Wafer Containing IPD Structure App 20120187531 - Lee; YongTaek ; et al.	2012-07-26
Semiconductor device and method of forming shielding layer around back surface and sides of semiconductor wafer containing IPD structure Grant 8,183,130 - Lee , et al. May 22, 2	2012-05-22
Semiconductor Device and Method of Forming RF FEM With LC Filter and IPD Filter Over Substrate App 20110304012 - Kim; Hyun Tai ; et al.	2011-12-15
Semiconductor Device and Method of Forming Shielding Layer Around Back Surface and Sides of Semiconductor Wafer Containing IPD Structure App 20110304011 - Lee; YongTaek ; et al.	2011-12-15
Semiconductor Device With Cross-Talk Isolation Using M-CAP and Method Thereof App 20090236734 - Lee; YongTaek ; et al.	2009-09-24

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