Agarwal; Anant K.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Agarwal; Anant K..The latest application filed is for "high power insulated gate bipolar transistors".

Company Profile

0.49.35

Agarwal; Anant K. - Chapel Hill NC
Agarwal; Anant K. - Durham NC
Agarwal; Anant K. - Monroeville PA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Bipolar junction transistor structure for reduced current crowding Grant 9,755,018 - Cheng , et al. September 5, 2	2017-09-05
Double guard ring edge termination for silicon carbide devices Grant 9,640,609 - Zhang , et al. May 2, 2	2017-05-02
Bipolar junction transistor with improved avalanche capability Grant 9,601,605 - Zhang , et al. March 21, 2	2017-03-21
Diffused junction termination structures for silicon carbide devices Grant 9,570,560 - Zhang , et al. February 14, 2	2017-02-14
High power insulated gate bipolar transistors Grant 9,548,374 - Zhang , et al. January 17, 2	2017-01-17
Edge termination structures for silicon carbide devices Grant 9,515,135 - Ryu , et al. December 6, 2	2016-12-06
High-gain wide bandgap darlington transistors and related methods of fabrication Grant 9,478,537 - Zhang , et al. October 25, 2	2016-10-25
SiC devices with high blocking voltage terminated by a negative bevel Grant 9,349,797 - Cheng , et al. May 24, 2	2016-05-24
Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials Grant 9,312,343 - Zhang , et al. April 12, 2	2016-04-12
High Power Insulated Gate Bipolar Transistors App 20150287805 - Zhang; Qingchun ; et al.	2015-10-08
Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection Grant 8,901,699 - Ryu , et al. December 2, 2	2014-12-02
High power insulated gate bipolar transistors Grant 8,710,510 - Zhang , et al. April 29, 2	2014-04-29
Diffused Junction Termination Structures for Silicon Carbide Devices App 20140097450 - Zhang; Qingchun ; et al.	2014-04-10
Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same Grant 8,637,386 - Zhang , et al. January 28, 2	2014-01-28
Bipolar Junction Transistor With Improved Avalanche Capability App 20130264581 - Zhang; Qingchun ; et al.	2013-10-10
Semiconductor devices with current shifting regions and related methods Grant 8,497,552 - Zhang , et al. July 30, 2	2013-07-30
Bipolar Junction Transistor Structure For Reduced Current Crowding App 20130146894 - Cheng; Lin ; et al.	2013-06-13
Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures Grant 8,460,977 - Zhang , et al. June 11, 2	2013-06-11
Sic Devices With High Blocking Voltage Terminated By A Negative Bevel App 20130026493 - Cheng; Lin ; et al.	2013-01-31
Power switching devices having controllable surge current capabilities Grant 8,193,848 - Zhang , et al. June 5, 2	2012-06-05
Mesa Termination Structures For Power Semiconductor Devices And Methods Of Forming Power Semiconductor Devices With Mesa Termination Structures App 20120122305 - Zhang; Qingchun ; et al.	2012-05-17
Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations Grant 8,124,480 - Ryu , et al. February 28, 2	2012-02-28
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Grant 8,119,539 - Das , et al. February 21, 2	2012-02-21
Mesa termination structures for power semiconductor devices including mesa step buffers Grant 8,097,919 - Zhang , et al. January 17, 2	2012-01-17
Transistors with Semiconductor Interconnection Layers and Semiconductor Channel Layers of Different Semiconductor Materials App 20110084284 - Zhang; Qingchun ; et al.	2011-04-14
Methods Of Fabricating Silicon Carbide Devices Incorporating Multiple Floating Guard Ring Edge Terminations App 20110081772 - Ryu; Sei Hyung ; et al.	2011-04-07
High-Gain Wide Bandgap Darlington Transistors and Related Methods of Fabrication App 20110012129 - Zhang; Qingchun ; et al.	2011-01-20
Power Switching Devices Having Controllable Surge Current Capabilities App 20100301929 - Zhang; Qingchun ; et al.	2010-12-02
Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations Grant 7,842,549 - Ryu , et al. November 30, 2	2010-11-30
Power semiconductor devices with mesa structures and buffer layers including mesa steps Grant 7,838,377 - Zhang , et al. November 23, 2	2010-11-23
Diffused Junction Termination Structures For Silicon Carbide Devices And Methods Of Fabricating Silicon Carbide Devices Incorporating Same App 20100289032 - Zhang; Qingchun ; et al.	2010-11-18
Semiconductor Devices with Current Shifting Regions and Related Methods App 20100133549 - Zhang; Qingchun ; et al.	2010-06-03
Optically triggered wide bandgap bipolar power switching devices and circuits Grant 7,679,223 - Agarwal , et al. March 16, 2	2010-03-16
Mesa Termination Structures For Power Semiconductor Devices And Methods Of Forming Power Semiconductor Devices With Mesa Termination Structures App 20100032685 - Zhang; Qingchun ; et al.	2010-02-11
Methods of Fabricating Oxide Layers on Silicon Carbide Layers Utilizing Atomic Oxygen App 20100009545 - Das; Mrinal K. ; et al.	2010-01-14
High voltage silicon carbide devices having bi-directional blocking capabilities Grant 7,615,801 - Ryu , et al. November 10, 2	2009-11-10
Double Guard Ring Edge Termination for Silicon Carbide Devices and Methods of Fabricating Silicon Carbide Devices Incorporating Same App 20090212301 - Zhang; Qingchun ; et al.	2009-08-27
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Grant 7,572,741 - Das , et al. August 11, 2	2009-08-11
Power Semiconductor Devices With Mesa Structures And Buffer Layers Including Mesa Steps App 20090121319 - Zhang; Qingchun ; et al.	2009-05-14
Methods of Fabricating Silicon Carbide Devices Incorporating Multiple Floating Guard Ring Edge Terminations App 20090035926 - Ryu; Sei-Hyung ; et al.	2009-02-05
Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen App 20090004883 - Das; Mrinal K. ; et al.	2009-01-01
Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination Grant 7,419,877 - Ryu , et al. September 2, 2	2008-09-02
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Grant 7,414,268 - Ryu , et al. August 19, 2	2008-08-19
High voltage silicon carbide devices having bi-directional blocking capabilities Grant 7,391,057 - Ryu , et al. June 24, 2	2008-06-24
High Power Insulated Gate Bipolar Transistors App 20080105949 - Zhang; Qingchun ; et al.	2008-05-08
Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof Grant 7,345,310 - Agarwal , et al. March 18, 2	2008-03-18
Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Grant 7,304,334 - Agarwal , et al. December 4, 2	2007-12-04
Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same App 20070235757 - Agarwal; Anant K. ; et al.	2007-10-11
Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof, and methods of fabricating same App 20070145378 - Agarwal; Anant K. ; et al.	2007-06-28
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261345 - Ryu; Sei-Hyung ; et al.	2006-11-23
High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261347 - Ryu; Sei-Hyung ; et al.	2006-11-23
Optically triggered wide bandgap bipolar power switching devices and circuits App 20060261876 - Agarwal; Anant K. ; et al.	2006-11-23
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261348 - Ryu; Sei-Hyung ; et al.	2006-11-23
High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same App 20060261346 - Ryu; Sei-Hyung ; et al.	2006-11-23
Silicon carbide junction barrier schottky diodes with supressed minority carrier injection App 20060255423 - Ryu; Sei-Hyung ; et al.	2006-11-16
Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same App 20060118792 - Ryu; Sei-Hyung ; et al.	2006-06-08
Multiple floating guard ring edge termination for silicon carbide devices Grant 7,026,650 - Ryu , et al. April 11, 2	2006-04-11
Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same App 20060054895 - Ryu; Sei-Hyung ; et al.	2006-03-16
Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same App 20040135153 - Ryu, Sei-Hyung ; et al.	2004-07-15
Silicon carbide inversion channel mosfets Grant 6,653,659 - Ryu , et al. November 25, 2	2003-11-25
Silicon carbide inversion channel mosfets App 20020149022 - Ryu, Sei-Hyung ; et al.	2002-10-17
Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation Grant 6,429,041 - Ryu , et al. August 6, 2	2002-08-06
Self-aligned bipolar junction silicon carbide transistors Grant 6,329,675 - Singh , et al. December 11, 2	2001-12-11
Self-aligned bipolar junction silicon carbide transistors App 20010011729 - Singh, Ranbir ; et al.	2001-08-09
Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices Grant 6,218,254 - Singh , et al. April 17, 2	2001-04-17
Silicon carbide static induction transistor structure Grant 5,903,020 - Siergiej , et al. May 11, 1	1999-05-11
Static induction transistors Grant 5,705,830 - Siergiej , et al. January 6, 1	1998-01-06
Aluminum gallium nitride based heterojunction bipolar transistor Grant 5,641,975 - Agarwal , et al. June 24, 1	1997-06-24
Non-volatile random access memory cell constructed of silicon carbide Grant 5,510,630 - Agarwal , et al. April 23, 1	1996-04-23

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