| Patent | Date |
|---|
Ultraviolet light emitting devices and methods of fabrication
Grant 9,985,177 - Khan , et al. May 29, 2 | 2018-05-29 |
Fabrication technique for high frequency, high power group III nitride electronic devices
Grant 9,882,039 - Khan , et al. January 30, 2 | 2018-01-30 |
Semiconductor and template for growing semiconductors
Grant 9,859,457 - Adivarahan , et al. January 2, 2 | 2018-01-02 |
Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate
Grant 9,543,425 - Khan , et al. January 10, 2 | 2017-01-10 |
Ultraviolet Light Emitting Devices And Methods Of Fabrication
App 20160276533 - Khan; M. Asif ; et al. | 2016-09-22 |
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
App 20160240647 - Khan; Asif ; et al. | 2016-08-18 |
Selectively area regrown III-nitride high electron mobility transistor
Grant 9,343,563 - Khan , et al. May 17, 2 | 2016-05-17 |
Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate
Grant 9,343,544 - Khan , et al. May 17, 2 | 2016-05-17 |
Utlraviolet light emitting devices and methods of fabrication
Grant 9,331,240 - Khan , et al. May 3, 2 | 2016-05-03 |
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
App 20150270382 - Khan; Asif ; et al. | 2015-09-24 |
High power ultraviolet light emitting diode with superlattice
Grant 9,142,714 - Adivarahan , et al. September 22, 2 | 2015-09-22 |
Semiconductor and Template for Growing Semiconductors
App 20150263221 - Adivarahan; Vinod ; et al. | 2015-09-17 |
Selectively doped semi-conductors and methods of making the same
Grant 9,059,081 - Khan , et al. June 16, 2 | 2015-06-16 |
Selectively Area Regrown III-Nitride High Electron Mobility Transistor
App 20150001550 - Khan; Asif ; et al. | 2015-01-01 |
Selectively area regrown III-nitride high electron mobility transistor
Grant 8,796,097 - Khan , et al. August 5, 2 | 2014-08-05 |
Ultraviolet light emitting diode with AC voltage operation
Grant 8,698,191 - Khan , et al. April 15, 2 | 2014-04-15 |
Method to increase breakdown voltage of semiconductor devices
Grant 8,692,293 - Khan , et al. April 8, 2 | 2014-04-08 |
High power ultraviolet light sources and method of fabricating the same
Grant 8,680,551 - Adivarahan , et al. March 25, 2 | 2014-03-25 |
Novel Fabrication Technique for High Frequency, High Power Group III Nitride Electronic Devices
App 20140015011 - Khan; M. Asif ; et al. | 2014-01-16 |
Selectively Area Regrown III-Nitride High Electron Mobility Transistor
App 20130313613 - Khan; Asif ; et al. | 2013-11-28 |
Ultraviolet Light Emitting Diode With Ac Voltage Operation
App 20130256631 - KHAN; ASIF ; et al. | 2013-10-03 |
Multilayer barrier III-nitride transistor for high voltage electronics
Grant 8,541,817 - Fareed , et al. September 24, 2 | 2013-09-24 |
Ultraviolet light emitting diode with AC voltage operation
Grant 8,507,941 - Khan , et al. August 13, 2 | 2013-08-13 |
Fabrication technique for high frequency, high power group III nitride electronic devices
Grant 8,476,125 - Khan , et al. July 2, 2 | 2013-07-02 |
Low resistance ultraviolet light emitting device and method of fabricating the same
Grant 8,415,654 - Khan , et al. April 9, 2 | 2013-04-09 |
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
App 20130056796 - Khan; M. Asif ; et al. | 2013-03-07 |
Digital oxide deposition of SiO.sub.2 layers on wafers
Grant 8,372,697 - Khan , et al. February 12, 2 | 2013-02-12 |
Digital Oxide Deposition Of Sio2 Layers On Wafers
App 20130017689 - Khan; Asif ; et al. | 2013-01-17 |
Efficient thermal management and packaging for group III nitride based UV devices
Grant 8,354,687 - Adivarahan , et al. January 15, 2 | 2013-01-15 |
Micro-pixel ultraviolet light emitting diode
Grant 8,354,663 - Adivarahan , et al. January 15, 2 | 2013-01-15 |
Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates
Grant 8,338,273 - Khan , et al. December 25, 2 | 2012-12-25 |
Method to increase breakdown voltage of semiconductor devices
Grant 8,318,562 - Khan , et al. November 27, 2 | 2012-11-27 |
Stable High Power Ultraviolet Light Emitting Diode
App 20120145994 - ADIVARAHAN; Vinod ; et al. | 2012-06-14 |
Multilayer Barrier Iii-nitride Transistor For High Voltage Electronics
App 20110108887 - Fareed; Qhalid ; et al. | 2011-05-12 |
Ultraviolet Light Emitting Diode With Ac Voltage Operation
App 20110073838 - Khan; Asif ; et al. | 2011-03-31 |
Low Resistance Ultraviolet Light Emitting Device And Method Of Fabricating The Same
App 20110012089 - Khan; Asif ; et al. | 2011-01-20 |
Micro-pixel Ultraviolet Light Emitting Diode
App 20100264401 - Adivarahan; Vinod ; et al. | 2010-10-21 |
Selectively Doped Semi-conductors And Methods Of Making The Same
App 20100187545 - Khan; Asif ; et al. | 2010-07-29 |
Pulsed Selective Area Lateral Epitaxy For Growth Of Iii-nitride Materials Over Non-polar And Semi-polar Substrates
App 20100140745 - Khan; M. Asif ; et al. | 2010-06-10 |
Novel Fabrication Technique For High Frequency, High Power Group Iii Nitride Electronic Devices
App 20100102359 - Khan; M. Asif ; et al. | 2010-04-29 |
Utlraviolet Light Emitting Devices And Methods Of Fabrication
App 20100032647 - Khan; M. Asif ; et al. | 2010-02-11 |
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
App 20090090984 - Khan; M. Asif ; et al. | 2009-04-09 |
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