Adem; Ercan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Adem; Ercan.The latest application filed is for "preamorphization to minimize void formation".

Company Profile

0.12.2

Adem; Ercan - Sunnyvale CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Thin film germanium diode with low reverse breakdown Grant 7,468,296 - Adem , et al. December 23, 2	2008-12-23
Preamorphization to minimize void formation Grant 7,361,586 - Adem , et al. April 22, 2	2008-04-22
Preamorphization to minimize void formation App 20070020919 - Adem; Ercan ; et al.	2007-01-25
Method of ultra-low energy ion implantation to form alloy layers in copper Grant 7,115,498 - Adem October 3, 2	2006-10-03
Method of forming a selective barrier layer using a sacrificial layer Grant 6,869,878 - Adem , et al. March 22, 2	2005-03-22
Method of forming wiring by implantation of seed layer material Grant 6,770,559 - Adem , et al. August 3, 2	2004-08-03
Method of in situ monitoring of thickness and composition of deposited films using raman spectroscopy Grant 6,667,070 - Adem December 23, 2	2003-12-23
Method and apparatus for determining an etch endpoint Grant 6,641,747 - Lukanc , et al. November 4, 2	2003-11-04
Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing Grant 6,605,513 - Paton , et al. August 12, 2	2003-08-12
Process for forming fully silicided gates Grant 6,562,718 - Xiang , et al. May 13, 2	2003-05-13
HDP treatment for reduced nickel silicide bridging Grant 6,521,529 - Ngo , et al. February 18, 2	2003-02-18
Method Of Forming Nickel Silicide Using A One-step Rapid Thermal Anneal Process And Backend Processing App 20020068408 - Paton, Eric N. ; et al.	2002-06-06
Gate stack structure for variable threshold voltage Grant 6,281,559 - Yu , et al. August 28, 2	2001-08-28
Semiconductor device having a low dielectric constant material Grant 6,208,030 - Tsui , et al. March 27, 2	2001-03-27

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