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name:-0.0082039833068848
name:-0.006749153137207
name:-0.0013949871063232
Abrokwah; Jonathan Patent Filings

Abrokwah; Jonathan

Patent Applications and Registrations

Patent applications and USPTO patent grants for Abrokwah; Jonathan.The latest application filed is for "high-dielectric constant capacitor structures on iii-v substrates".

Company Profile
1.7.7
  • Abrokwah; Jonathan - Fort Collins CO
  • Abrokwah; Jonathan - Tempe AZ
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
High-Dielectric Constant Capacitor Structures on III-V Substrates
App 20190006459 - Yeldandi; Satish ;   et al.
2019-01-03
Moisture barrier for semiconductor structures with stress relief
Grant 9,576,920 - Abrokwah , et al. February 21, 2
2017-02-21
Moisture barrier for semiconductor structures with stress relief
Grant 9,508,661 - Abrokwah , et al. November 29, 2
2016-11-29
Moisture Barrier For Semiconductor Structures With Stress Relief
App 20160336284 - Abrokwah; Jonathan ;   et al.
2016-11-17
Moisture Barrier For Semiconductor Structures With Stress Relief
App 20160020179 - Abrokwah; Jonathan ;   et al.
2016-01-21
Passivation for Group III-V Semiconductor Devices Having a Plated Metal Layer over an Interlayer Dielectric Layer
App 20150048484 - Perkins; Nathan ;   et al.
2015-02-19
Passivation for group III-V semiconductor devices having a plated metal layer over an interlayer dielectric layer
Grant 8,941,218 - Perkins , et al. January 27, 2
2015-01-27
Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer
Grant 8,901,606 - Perkins , et al. December 2, 2
2014-12-02
Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
Grant 8,853,743 - Abrokwah , et al. October 7, 2
2014-10-07
Pseudomorphic High Electron Mobility Transistor Comprising Doped Low Temperature Buffer Layer
App 20140138746 - Abrokwah; Jonathan ;   et al.
2014-05-22
PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (pHEMT) COMPRISING LOW TEMPERATURE BUFFER LAYER
App 20130285119 - PERKINS; Nate ;   et al.
2013-10-31
Low subthreshold leakage current HFET
Grant 5,895,929 - Abrokwah , et al. April 20, 1
1999-04-20

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