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Patent applications and USPTO patent grants for Abeln; Glenn C..The latest application filed is for "sram with improved write operation".
Patent | Date |
---|---|
SRAM with improved write operation Grant 8,913,456 - Badrudduza , et al. December 16, 2 | 2014-12-16 |
Sram With Improved Write Operation App 20140119100 - BADRUDDUZA; SAYEED A. ;   et al. | 2014-05-01 |
Semiconductor Devices With Extended Active Regions App 20120007155 - HALL; MARK D. ;   et al. | 2012-01-12 |
Semiconductor devices with extended active regions Grant 8,062,953 - Hall , et al. November 22, 2 | 2011-11-22 |
Trench formation in a semiconductor material Grant 7,879,663 - Hall , et al. February 1, 2 | 2011-02-01 |
Semiconductor Devices With Extended Active Regions App 20100025805 - HALL; MARK D. ;   et al. | 2010-02-04 |
Memory cells with lower power consumption during a write operation Grant 7,609,541 - Burnett , et al. October 27, 2 | 2009-10-27 |
Two-port SRAM having improved write operation Grant 7,440,313 - Abeln , et al. October 21, 2 | 2008-10-21 |
Trench Formation In A Semiconductor Material App 20080217705 - Hall; Mark D. ;   et al. | 2008-09-11 |
Memory Cells With Lower Power Consumption During A Write Operation App 20080158938 - Burnett; James David ;   et al. | 2008-07-03 |
Two-port Sram Having Improved Write Operation App 20080117665 - Abeln; Glenn C. ;   et al. | 2008-05-22 |
Method of forming trench isolation in a semiconductor device App 20060234467 - Van Gompel; Toni D. ;   et al. | 2006-10-19 |
Method for making an integrated circuit including high and low voltage transistors Grant 6,207,510 - Abeln , et al. March 27, 2 | 2001-03-27 |
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