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name:-0.014465808868408
name:-0.017575979232788
name:-0.00066494941711426
4D-S PTY, LTD Patent Filings

4D-S PTY, LTD

Patent Applications and Registrations

Patent applications and USPTO patent grants for 4D-S PTY, LTD.The latest application filed is for "heterojunction oxide non-volatile memory device".

Company Profile
0.16.14
  • 4D-S PTY, LTD - Perth AU
  • 4D-S Pty Ltd. - Perth AU
  • 4D-S Pty, Ltd - AU AU
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Heterojunction oxide non-volatile memory device
Grant 10,003,020 - Chen June 19, 2
2018-06-19
Heterojunction Oxide Non-volatile Memory Device
App 20170141303 - Chen; Dongmin
2017-05-18
Heterojunction oxide non-volatile memory device
Grant 9,520,559 - Chen December 13, 2
2016-12-13
Heterojunction Oxide Non-volatile Memory Device
App 20160118581 - Chen; Dongmin
2016-04-28
Heterojunction oxide non-volatile memory devices
Grant 9,293,201 - Chen March 22, 2
2016-03-22
Systems and methods for fabricating self-aligned memory cell
Grant 8,884,401 - Nagashima November 11, 2
2014-11-11
Heterojunction oxide non-volatile memory device
Grant 8,698,120 - Chen April 15, 2
2014-04-15
Systems And Methods For Fabricating Self-aligned Memory Cell
App 20130248812 - Nagashima; Makoto
2013-09-26
Systems And Methods For Fabricating Self-aligned Resistive/magnetic Memory Cell
App 20130224888 - Nagashima; Makoto
2013-08-29
Systems and methods for fabricating self-aligned memory cell
Grant 8,466,032 - Nagashima June 18, 2
2013-06-18
Dual hexagonal shaped plasma source
Grant 8,454,810 - Nagashima June 4, 2
2013-06-04
Systems And Methods For Fabricating Self-aligned Memory Cell
App 20130109150 - Nagashima; Makoto
2013-05-02
Systems and methods for fabricating self-aligned memory cell
Grant 8,395,199 - Nagashima March 12, 2
2013-03-12
Heterojunction oxide non-volatile memory device
Grant 8,378,345 - Chen February 19, 2
2013-02-19
Systems and methods for fabricating self-aligned memory cell
Grant 8,367,513 - Nagashima February 5, 2
2013-02-05
Systems and methods for magnetron deposition
Grant 8,308,915 - Nagashima November 13, 2
2012-11-13
Heterojunction Oxide Non-volatile Memory Device
App 20120205611 - Chen; Dongmin
2012-08-16
Heterojunction Oxide Non-volatile Memory Device
App 20120199804 - CHEN; Dongmin
2012-08-09
Method And System For Utilizing Perovskite Material For Charge Storage And As A Dielectric
App 20120195098 - Lan; Zhida
2012-08-02
Method And System For Utilizing Perovskite Material For Charge Storage And As A Dielectric
App 20120195097 - LAN; Zhida
2012-08-02
Systems And Methods For Fabricating Self-aligned Memory Cell
App 20120122290 - NAGASHIMA; Makoto
2012-05-17
Voltage excited piezoelectric resistance memory cell system
Grant 7,985,960 - Springer July 26, 2
2011-07-26
Systems and methods for fabricating self-aligned memory cell
Grant 7,932,548 - Nagashima April 26, 2
2011-04-26
Voltage Excited Piezoelectric Resistance Memory Cell System
App 20100276655 - Springer; Gilbert
2010-11-04
Concentric Hollow Cathode Magnetron Sputter Source
App 20090188790 - BRORS; DANIEL ;   et al.
2009-07-30
Systems and methods for plasma etching
Grant 7,425,504 - Nagashima , et al. September 16, 2
2008-09-16

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