4D-S, Ltd.

Patent Applications and Registrations

Patent applications and USPTO patent grants for 4D-S, Ltd..The latest application filed is for "resistive memory device having a conductive barrier layer".

Company Profile

7.17.9

4D-S, Ltd. - Perth AU
4D-S, Ltd - Perth N/A AU

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Resistive Memory Device Having A Conductive Barrier Layer App 20210050516 - Desu; Seshubabu ; et al.	2021-02-18
Resistive memory device having a conductive barrier layer Grant 10,833,262 - Desu , et al. November 10, 2	2020-11-10
Resistive memory device having ohmic contacts Grant 10,734,576 - Desu	2020-08-04
Resistive Memory Device Having A Conductive Barrier Layer App 20190288196 - Desu; Seshubabu ; et al.	2019-09-19
Resistive Memory Device Having Ohmic Contacts App 20190288197 - Desu; Seshubabu	2019-09-19
Resistive memory device having a retention layer Grant 10,381,558 - Desu , et al. A	2019-08-13
Resistive memory device having a template layer Grant 10,319,907 - Desu	2019-06-11
Systems And Methods For Fabricating Self-aligned Resistive/magnetic Memory Cell App 20170244025 - Nagashima; Makoto	2017-08-24
Systems and methods for fabricating self-aligned resistive/magnetic memory cell Grant 9,711,714 - Nagashima July 18, 2	2017-07-18
Complementary metal oxide heterojunction memory devices and methods related thereto Grant 9,634,247 - Chen , et al. April 25, 2	2017-04-25
Methods and circuits for bulk erase of resistive memory Grant 9,058,876 - Cleveland , et al. June 16, 2	2015-06-16
Methods And Circuits For Bulk Erase Of Resistive Memory App 20140376299 - Cleveland; Lee ; et al.	2014-12-25
Dual hexagonal shaped plasma source Grant 8,911,602 - Nagashima December 16, 2	2014-12-16
Complementary Metal Oxide Or Metal Nitride Heterojunction Memory Devices With Asymmetric Hysteresis Property App 20140269007 - Cleveland; Lee ; et al.	2014-09-18
Heterojunction Oxide Non-volatile Memory Devices App 20140169070 - Chen; Dongmin	2014-06-19
Method and system for utilizing Perovskite material for charge storage and as a dielectric Grant 8,709,891 - Lan , et al. April 29, 2	2014-04-29
Method And System For Utilizing Perovskite Material For Charge Storage And As A Dielectric App 20130279236 - Lan; Zhida ; et al.	2013-10-24
Dual Hexagonal Shaped Plasma Source App 20130233701 - Nagashima; Makoto	2013-09-12
Systems and methods for fabricating self-aligned memory cell Grant 8,466,032 - Nagashima June 18, 2	2013-06-18

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